Fast high-fidelity entangling gates for spin qubits in Si double quantum dots
Published: July 9, 2019 (Physical Review B)
Authors: F. A. Calderon-Vargas, Samantha V. Barron, Xiu-Hao Deng, A. J. Sigillito, Edwin Barnes, Sophia E. Economou,
Abstract:
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses that generate cnot, cphase, and cz gates with average fidelities greater than 99.99% and gate times as short as 45 ns. Moreover, using the local invariants of the system’s evolution operator, we show that a simple square pulse generates a cnot gate in less than 27 ns and with a fidelity greater than 99.99%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to √CNOT and √CZ that are used to implement simple two-piece pulse sequences that produce high-fidelity cnot and cz gates in the presence of low-frequency noise.
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